Transient Grating Spectrometer HARPIA-TG
- Carrier diffusion coefficient in a matter of minutes!
- Non-invasive measurement technique
- Fully automated and computer controlled
- Continuous setting of grating period
- Sensitivity down to µJ/cm² excitation level
- Advanced measurement and analysis software
- Photoluminescence (PL) measurement option
Features
- Carrier diffusion coefficient in a matter of minutes!
- Non-invasive measurement technique
- Fully automated and computer controlled
- Continuous setting of grating period
- Sensitivity down to µJ/cm² excitation level
- Advanced measurement and analysis software
- Photoluminescence (PL) measurement option
HARPIA-TG is a transient grating spectrometer for the measurement of carrier diffusion and lifetime. Measurements are based on the laser-induced transient grating (LITG) technique. This method enables simultaneous observation of non-equilibrium carrier recombination and diffusion by all‑optical means.
HARPIA-TG allows the characterization of electrically non‑conductive or non-fluorescent samples. It is suitable for semiconductors materials and derivatives, e.g., silicon carbide (SiC), gallium nitride (GaN), perovskites, organic and inorganic solar cells, quantum dots, and even complex nanostructures such as quantum wells.
Coupled with CARBIDE or PHAROS laser with integrated optical parametric amplifier (I-OPA), the compact system is fully automated and computer-controlled via advanced measurement and analysis software. Thus, the user only needs to put the sample in the holder and start the measurement to obtain the diffusion coefficient in a matter of minutes.
- Transient grating spectroscopy
- Single-wavelength transient absorption
- Extendable to long-wave VIS/NIR. Contact sales@lightcon.com for details.
- SH (515 nm) or OPA-based probe is available upon request. Contact sales@lightcon.com for details.
- Depends on the excitation wavelength.
The graphs below indicate the carrier diffusion coefficient, diffusion length, and lifetime of GaN at the back and at the front of the layer as a function of fluence. The thicker the GaN, the better the quality of the grown layer due to better coalescence. It is evidenced by the lower diffusivity and shorter lifetimes that indicate poor structural quality and higher defect density at the interface between the sapphire substrate and GaN.
Measurements were performed using HARPIA-TG combined with CARBIDE-CB5 laser and I-OPA. Measurement conditions: 60 kHz, 355 nm pump wavelength, 1030 nm probe wavelength.
HARPIA-TG offers a dedicated software that enables fully automated selection of pump and probe parameters and grating period, thus, making the measurements of diffusion coefficient and carrier lifetime as simple as possible.
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