Dicing
Precise dicing of a silicon wafer.
Silicon wafer dice.
Femtosecond laser silicon dicing is an advanced technique used to precisely cut or dice silicon wafers in semiconductor manufacturing. It employs ultra-short laser pulses to create highly localized energy absorption within the material. This results in minimal heat-affected zones, reducing damage and preventing thermal stress on the silicon. The method allows for cleaner, more accurate cuts with smooth edges, making it ideal for high-precision applications in electronics and microelectronics, where maintaining the integrity of delicate structures is critical.
Single-pass (300 mm/s) dicing of a 500-µm-thick 4H-SiC wafer.
Precise free-form dicing of a 4H-SiC wafer.
Femtosecond laser silicon carbide (SiC) dicing is a high-precision process used to cut or separate silicon carbide wafers, commonly used in power electronics and semiconductor devices. The technique utilizes ultra-short laser pulses to create extremely localized energy absorption in the material. This minimizes thermal damage and prevents cracking or chipping, which is crucial due to silicon carbide’s hardness and brittleness. Femtosecond laser dicing offers cleaner cuts, higher precision, and reduced material waste, making it ideal for handling the challenges of SiC processing in high-performance applications.
